Publications

First reported Seebeck coefficient study across a wide temperature range on single crystal β-Ga₂O₃. As Ga₂O₃ emerges as the leading ultra-wide-bandgap semiconductor globally, this paper establishes the author among the earliest researchers defining its thermoelectric baseline. Covered by the Semiconductor Society of India (SSI).

Most comprehensive combined experimental and DFT theoretical study of GaN as a thermoelectric material. Established GaN's viability in the thermoelectric space — cited by multiple subsequent groups working on wide-bandgap thermoelectrics globally.

First experimental demonstration that swift heavy ion irradiation can be used as a precision tool to engineer thermopower in GaN. This paper opened the ion-beam thermoelectric engineering research direction that has since defined the author's research identity and generated a series of funded projects.

First reported in-situ DLTS measurement of ion-beam induced deep-level defects in GaN in real time during irradiation. The custom in-situ DLTS system was entirely designed and built by the author. No other group in India has demonstrated this experimental capability.

Original instrumentation paper describing a custom-designed versatile Seebeck and resistivity measurement system — one of very few such systems designed indigenously in India. Published in the premier instrumentation journal of the American Institute of Physics. Now used by multiple collaborating groups nationally.

First real-time in-situ electrical characterisation of GaN devices under live SHI beam combined with post-irradiation TEM microstructural analysis. Among the most technically sophisticated experiments reported from IUAC.

Papers [7] & [8] together form a connected body of work on ruthenium-based GaN passivation — published a decade apart (2014 & 2023) and selected as the basis of an invited Research Review in Compound Semiconductor magazine (Vol. 29, Issue II, 2023) — an exceptionally rare recognition.

Foundational paper from the author's PhD establishing the ion-damage model for III-V Schottky barrier devices under heavy ion bombardment. First simultaneous in-situ electrical + TEM microstructural correlation study of SHI-irradiated GaN SBDs. The seed paper from which the entire subsequent research programme grew.

High-performance printable flexible thermoelectric composite combining organic polymer, inorganic semiconductor, and graphene in a single ternary architecture. Selected for the RSC Advances Outstanding Student Paper Award (2024).